Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO.

In this paper, we demonstrate low-thermal-budget ferroelectric field-effect transistors (FeFETs) based on the two-dimensional ferroelectric CuInP2S6 (CIPS) and oxide semiconductor InZnO (IZO). The CIPS/IZO FeFETs exhibit nonvolatile memory windows of ∼1 V, low off-state drain currents, and high carrier mobilities. The ferroelectric CIPS layer serves a dual purpose by providing electrostatic doping in IZO and acting as a passivation layer for the IZO channel. We also investigate the CIPS/IZO FeFETs as artificial synaptic devices for neural networks. The CIPS/IZO synapse demonstrates a sizable dynamic ratio (125) and maintains stable multilevel states. Neural networks based on CIPS/IZO FeFETs achieve an accuracy rate of over 80% in recognizing MNIST handwritten digits. These ferroelectric transistors can be vertically stacked on silicon complementary metal-oxide semiconductor (CMOS) with a low thermal budget, offering broad applications in CMOS+X technologies and energy-efficient 3D neural networks.

A multicenter retrospective study of patients treated in the thalamus with responsive neurostimulation.

Introduction: For drug resistant epilepsy patients who are either not candidates for resective surgery or have already failed resective surgery, neuromodulation is a promising option. Neuromodulatory approaches include responsive neurostimulation (RNS), deep brain stimulation (DBS), and vagal nerve stimulation (VNS). Thalamocortical circuits are involved in both generalized and focal onset seizures. This paper explores the use of RNS in the centromedian nucleus of the thalamus (CMN) and in the anterior thalamic nucleus (ANT) of patients with drug resistant epilepsy. Methods: This is a retrospective multicenter study from seven different epilepsy centers in the United States. Patients that had unilateral or bilateral thalamic RNS leads implanted in the CMN or ANT for at least 6 months were included. Primary objectives were to describe the implant location and determine changes in the frequency of disabling seizures at 6 months, 1 year, 2 years, and > 2 years. Secondary objectives included documenting seizure free periods, anti-seizure medication regimen changes, stimulation side effects, and serious adverse events. In addition, the global clinical impression scale was completed. Results: Twelve patients had at least one lead placed in the CMN, and 13 had at least one lead placed in the ANT. The median baseline seizure frequency was 15 per month. Overall, the median seizure reduction was 33% at 6 months, 55% at 1 year, 65% at 2 years, and 74% at >2 years. Seizure free intervals of at least 3 months occurred in nine patients. Most patients (60%, 15/25) did not have a change in anti-seizure medications post RNS placement. Two serious adverse events were recorded, one related to RNS implantation. Lastly, overall functioning seemed to improve with 88% showing improvement on the global clinical impression scale. Discussion: Meaningful seizure reduction was observed in patients who suffer from drug resistant epilepsy with unilateral or bilateral RNS in either the ANT or CMN of the thalamus. Most patients remained on their pre-operative anti-seizure medication regimen. The device was well tolerated with few side effects. There were rare serious adverse events. Most patients showed an improvement in global clinical impression scores.

An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP2S6/GaN HEMT.

A neuromuscular junction (NMJ) is a particularized synapse that activates muscle fibers for macro-motions, requiring more energy than computation. Emulating the NMJ is thus challenging owing to the need for both synaptic plasticity and high driving power to trigger motions. Here, we present an artificial NMJ using CuInP2S6 (CIPS) as a gate dielectric integrated with an AlGaN/GaN-based high-electron mobility transistor (HEMT). The ferroelectricity of the CIPS is coupled with the two-dimensional electron gas channel in the HEMT, providing a wide programmable current range of 6 picoampere per millimeter to 5 milliampere per millimeter. The large output current window of the CIPS/GaN ferroelectric HEMT (FeHEMT) allows for amplifier-less actuation, emulating the biological NMJ functions of actuation and synaptic plasticity. We also demonstrate the emulation of biological oculomotor dynamics, including in situ object tracking and enhanced stimulus responses, using the fabricated artificial NMJ. We believe that the CIPS/GaN FeHEMT offers a promising pathway for bioinspired robotics and neuromorphic vision.

Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer.

Significant effort for demonstrating a gallium nitride (GaN)-based ferroelectric metal-oxide-semiconductor (MOS)-high-electron-mobility transistor (HEMT) for reconfigurable operation via simple pulse operation has been hindered by the lack of suitable materials, gate structures, and intrinsic depolarization effects. In this study, we have demonstrated artificial synapses using a GaN-based MOS-HEMT integrated with an α-In2Se3 ferroelectric semiconductor. The van der Waals heterostructure of GaN/α-In2Se3 provides a potential to achieve high-frequency operation driven by a ferroelectrically coupled two-dimensional electron gas (2DEG). Moreover, the semiconducting α-In2Se3 features a steep subthreshold slope with a high ON/OFF ratio (∼1010). The self-aligned α-In2Se3 layer with the gate electrode suppresses the in-plane polarization while promoting the out-of-plane (OOP) polarization of α-In2Se3, resulting in a steep subthreshold slope (10 mV/dec) and creating a large hysteresis (2 V). Furthermore, based on the short-term plasticity (STP) characteristics of the fabricated ferroelectric HEMT, we demonstrated reservoir computing (RC) for image classification. We believe that the ferroelectric GaN/α-In2Se3 HEMT can provide a viable pathway toward ultrafast neuromorphic computing.

High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process.

Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III-N and III-V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost.

Vertical full-colour micro-LEDs via 2D materials-based layer transfer.

Micro-LEDs (µLEDs) have been explored for augmented and virtual reality display applications that require extremely high pixels per inch and luminance1,2. However, conventional manufacturing processes based on the lateral assembly of red, green and blue (RGB) µLEDs have limitations in enhancing pixel density3-6. Recent demonstrations of vertical µLED displays have attempted to address this issue by stacking freestanding RGB LED membranes and fabricating top-down7-14, but minimization of the lateral dimensions of stacked µLEDs has been difficult. Here we report full-colour, vertically stacked µLEDs that achieve, to our knowledge, the highest array density (5,100 pixels per inch) and the smallest size (4 µm) reported to date. This is enabled by a two-dimensional materials-based layer transfer technique15-18 that allows the growth of RGB LEDs of near-submicron thickness on two-dimensional material-coated substrates via remote or van der Waals epitaxy, mechanical release and stacking of LEDs, followed by top-down fabrication. The smallest-ever stack height of around 9 µm is the key enabler for record high µLED array density. We also demonstrate vertical integration of blue µLEDs with silicon membrane transistors for active matrix operation. These results establish routes to creating full-colour µLED displays for augmented and virtual reality, while also offering a generalizable platform for broader classes of three-dimensional integrated devices.

Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction.

Heterogeneous integration of single-crystal materials offers great opportunities for advanced device platforms and functional systems1. Although substantial efforts have been made to co-integrate active device layers by heteroepitaxy, the mismatch in lattice polarity and lattice constants has been limiting the quality of the grown materials2. Layer transfer methods as an alternative approach, on the other hand, suffer from the limited availability of transferrable materials and transfer-process-related obstacles3. Here, we introduce graphene nanopatterns as an advanced heterointegration platform that allows the creation of a broad spectrum of freestanding single-crystalline membranes with substantially reduced defects, ranging from non-polar materials to polar materials and from low-bandgap to high-bandgap semiconductors. Additionally, we unveil unique mechanisms to substantially reduce crystallographic defects such as misfit dislocations, threading dislocations and antiphase boundaries in lattice- and polarity-mismatched heteroepitaxial systems, owing to the flexibility and chemical inertness of graphene nanopatterns. More importantly, we develop a comprehensive mechanics theory to precisely guide cracks through the graphene layer, and demonstrate the successful exfoliation of any epitaxial overlayers grown on the graphene nanopatterns. Thus, this approach has the potential to revolutionize the heterogeneous integration of dissimilar materials by widening the choice of materials and offering flexibility in designing heterointegrated systems.

In-sensor image memorization and encoding via optical neurons for bio-stimulus domain reduction toward visual cognitive processing.

As machine vision technology generates large amounts of data from sensors, it requires efficient computational systems for visual cognitive processing. Recently, in-sensor computing systems have emerged as a potential solution for reducing unnecessary data transfer and realizing fast and energy-efficient visual cognitive processing. However, they still lack the capability to process stored images directly within the sensor. Here, we demonstrate a heterogeneously integrated 1-photodiode and 1 memristor (1P-1R) crossbar for in-sensor visual cognitive processing, emulating a mammalian image encoding process to extract features from the input images. Unlike other neuromorphic vision processes, the trained weight values are applied as an input voltage to the image-saved crossbar array instead of storing the weight value in the memristors, realizing the in-sensor computing paradigm. We believe the heterogeneously integrated in-sensor computing platform provides an advanced architecture for real-time and data-intensive machine-vision applications via bio-stimulus domain reduction.

Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors.

Recent advances in flexible and stretchable electronics have led to a surge of electronic skin (e-skin)-based health monitoring platforms. Conventional wireless e-skins rely on rigid integrated circuit chips that compromise the overall flexibility and consume considerable power. Chip-less wireless e-skins based on inductor-capacitor resonators are limited to mechanical sensors with low sensitivities. We report a chip-less wireless e-skin based on surface acoustic wave sensors made of freestanding ultrathin single-crystalline piezoelectric gallium nitride membranes. Surface acoustic wave-based e-skin offers highly sensitive, low-power, and long-term sensing of strain, ultraviolet light, and ion concentrations in sweat. We demonstrate weeklong monitoring of pulse. These results present routes to inexpensive and versatile low-power, high-sensitivity platforms for wireless health monitoring devices.

Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption.

Intersubband (intraband) transitions allow absorption of photons in the infrared spectral regime, which is essential for IR-photodetector and optical communication applications. Among various technologies, nanodisks embedded in nanowires offer a unique opportunity to be utilized in intraband devices due to the ease of tuning the fundamental parameters such as strain distribution, band energy, and confinement of the active region. Here, we show the transverse electric polarized intraband absorption using InGaN/GaN nanodisks cladded by AlGaN. Fourier transform infrared reflection (FTIR) measurement confirms absorption of normal incident in-plane transverse electric polarized photons in the mid-IR regime (wavelength of ~ 15 µm) at room temperature. The momentum matrix of the nanodisk energy states indicates electron transition from the ground state s into the px or py orbital-like excited states. Furthermore, the absorption characteristics depending on the indium composition and nanowire diameter exhibits tunability of the intraband absorption spectra within the nanodisks. We believe nanodisks embedded nanowires is a promising technology for achieving tunable detection of photons in the IR spectrum.

Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure.

Multispectral photodetectors are emerging devices capable of detecting photons in multiple wavelength ranges, such as visible (VIS), near infrared (NIR), etc. Image data acquired with these photodetectors can be used for effective object identification and navigations owing to additional information beyond human vision, including thermal image and night vision. However, these capabilities are hindered by the structural complexity arising from the integration of multiple heterojunctions and selective absorbers. In this paper, we demonstrate a Ge/MoS2 van der Waals heterojunction photodetector for VIS- and IR-selective detection capability under near-photovoltaic and photoconductive modes. The simplified single-polarity bias operation using single pixel could considerably reduce structural complexity and minimize peripheral circuitry for multispectral selective detection. The proposed multispectral photodetector provides a potential pathway for the integration of VIS/NIR vision for application in self-driving, surveillance, computer vision, and biomedical imaging.

Exciton-Dominated Ultrafast Optical Response in Atomically Thin PtSe2.

Strongly bound excitons are a characteristic hallmark of 2D semiconductors, enabling unique light-matter interactions and novel optical applications. Platinum diselenide (PtSe2 ) is an emerging 2D material with outstanding optical and electrical properties and excellent air stability. Bulk PtSe2 is a semimetal, but its atomically thin form shows a semiconducting phase with the appearance of a band-gap, making one expect strongly bound 2D excitons. However, the excitons in PtSe2 have been barely studied, either experimentally or theoretically. Here, the authors directly observe and theoretically confirm excitons and their ultrafast dynamics in mono-, bi-, and tri-layer PtSe2 single crystals. Steady-state optical microscopy reveals exciton absorption resonances and their thickness dependence, confirmed by first-principles calculations. Ultrafast transient absorption microscopy finds that the exciton dominates the transient broadband response, resulting from strong exciton bleaching and renormalized band-gap-induced exciton shifting. The overall transient spectrum redshifts with increasing thickness as the shrinking band-gap redshifts the exciton resonance. This study provides novel insights into exciton photophysics in platinum dichalcogenides.

A lab-on-a-disc platform enables serial monitoring of individual CTCs associated with tumor progression during EGFR-targeted therapy for patients with NSCLC.

Rationale: Unlike traditional biopsy, liquid biopsy, which is a largely non-invasive diagnostic and monitoring tool, can be performed more frequently to better track tumors and mutations over time and to validate the efficiency of a cancer treatment. Circulating tumor cells (CTCs) are considered promising liquid biopsy biomarkers; however, their use in clinical settings is limited by high costs and a low throughput of standard platforms for CTC enumeration and analysis. In this study, we used a label-free, high-throughput method for CTC isolation directly from whole blood of patients using a standalone, clinical setting-friendly platform. Methods: A CTC-based liquid biopsy approach was used to examine the efficacy of therapy and emergent drug resistance via longitudinal monitoring of CTC counts, DNA mutations, and single-cell-level gene expression in a prospective cohort of 40 patients with epidermal growth factor receptor (EGFR)-mutant non-small cell lung cancer. Results: The change ratio of the CTC counts was associated with tumor response, detected by CT scan, while the baseline CTC counts did not show association with progression-free survival or overall survival. We achieved a 100% concordance rate for the detection of EGFR mutation, including emergence of T790M, between tumor tissue and CTCs. More importantly, our data revealed the importance of the analysis of the epithelial/mesenchymal signature of individual pretreatment CTCs to predict drug responsiveness in patients. Conclusion: The fluid-assisted separation technology disc platform enables serial monitoring of CTC counts, DNA mutations, as well as unbiased molecular characterization of individual CTCs associated with tumor progression during targeted therapy.

Capillary transfer of soft films.

Existing transfer technologies in the construction of film-based electronics and devices are deeply established in the framework of native solid substrates. Here, we report a capillary approach that enables a fast, robust, and reliable transfer of soft films from liquid in a defect-free manner. This capillary transfer is underpinned by the transfer front of dynamic contact among receiver substrate, liquid, and film, and can be well controlled by a selectable motion direction of receiver substrates at a high speed. We demonstrate in extensive experiments, together with theoretical models and computational analysis, the robust capabilities of the capillary transfer using a versatile set of soft films with a broad material diversity of both film and liquid, surface-wetting properties, and complex geometric patterns of soft films onto various solid substrates in a deterministic manner.

Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy.

Although conventional homoepitaxy forms high-quality epitaxial layers1-5, the limited set of material systems for commercially available wafers restricts the range of materials that can be grown homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic device performances6-8, is fundamentally unavoidable in highly lattice-mismatched epitaxy9-11. Here, we introduce a unique mechanism of relaxing misfit strain in heteroepitaxial films that can enable effective lattice engineering. We have observed that heteroepitaxy on graphene-coated substrates allows for spontaneous relaxation of misfit strain owing to the slippery graphene surface while achieving single-crystalline films by reading the atomic potential from the substrate. This spontaneous relaxation technique could transform the monolithic integration of largely lattice-mismatched systems by covering a wide range of the misfit spectrum to enhance and broaden the functionality of semiconductor devices for advanced electronics and photonics.

Heterogeneous integration of single-crystalline complex-oxide membranes.

Complex-oxide materials exhibit a vast range of functional properties desirable for next-generation electronic, spintronic, magnetoelectric, neuromorphic, and energy conversion storage devices1-4. Their physical functionalities can be coupled by stacking layers of such materials to create heterostructures and can be further boosted by applying strain5-7. The predominant method for heterogeneous integration and application of strain has been through heteroepitaxy, which drastically limits the possible material combinations and the ability to integrate complex oxides with mature semiconductor technologies. Moreover, key physical properties of complex-oxide thin films, such as piezoelectricity and magnetostriction, are severely reduced by the substrate clamping effect. Here we demonstrate a universal mechanical exfoliation method of producing freestanding single-crystalline membranes made from a wide range of complex-oxide materials including perovskite, spinel and garnet crystal structures with varying crystallographic orientations. In addition, we create artificial heterostructures and hybridize their physical properties by directly stacking such freestanding membranes with different crystal structures and orientations, which is not possible using conventional methods. Our results establish a platform for stacking and coupling three-dimensional structures, akin to two-dimensional material-based heterostructures, for enhancing device functionalities8,9.

Hetero-integration enables fast switching time-of-flight sensors for light detection and ranging.

The time-of-flight (ToF) principle is a method used to measure distance and construct three-dimensional (3D) images by detecting the time or the phase difference between emitted and back-reflected optical flux. The ToF principle has been employed for various applications including light ranging and detection (LiDAR), machine vision and biomedical engineering; however, bulky system size and slow switching speed have hindered the widespread application of ToF technology. To alleviate these issues, a demonstration of hetero-integration of GaN-based high electron mobility transistors (HEMTs) and GaAs-based vertical cavity surface emitting lasers (VCSELs) on a single platform via a cold-welding method was performed. The hetero-integrated ToF sensors show superior switching performance when compared to silicon-transistor-based systems, miniaturizing size and exhibiting stable ranging and high-resolution depth-imaging. This hetero-integrated system of dissimilar material-based high-performance devices suggests a new pathway towards enabling high-resolution 3D imaging and inspires broader range application of heterogeneously integrated electronics and optoelectronics.

Circulating Tumor Cell Number Is Associated with Primary Tumor Volume in Patients with Lung Adenocarcinoma.

BACKGROUND: Circulating tumor cells (CTCs) are frequently detected in patients with advanced-stage malignant tumors and could act as a predictor of poor prognosis. However, there is a paucity of data on the relationship between CTC number and primary tumor volume in patients with lung cancer. Therefore, our study aimed to evaluate the relationship between CTC number and primary tumor volume in patients with lung adenocarcinoma. METHODS: We collected blood samples from 21 patients with treatment-naive lung adenocarcinoma and 73 healthy individuals. To count CTCs, we used a CTC enrichment method based on fluid-assisted separation technology. We compared CTC numbers between lung adenocarcinoma patients and healthy individuals using propensity score matching, and performed linear regression analysis to analyze the relationship between CTC number and primary tumor volume in lung adenocarcinoma patients. RESULTS: CTC positivity was significantly more common in lung adenocarcinoma patients than in healthy individuals (p<0.001). The median primary tumor volume in CTC-negative and CTC-positive patients was 10.0 cm³ and 64.8 cm³, respectively. Multiple linear regression analysis showed that the number of CTCs correlated with primary tumor volume in lung adenocarcinoma patients (ß=0.903, p=0.002). Further subgroup analysis showed a correlation between CTC number and primary tumor volume in patients with distant (p=0.024) and extra-thoracic (p=0.033) metastasis (not in patients with distant metastasis). CONCLUSION: Our study showed that CTC numbers may be associated with primary tumor volume in lung adenocarcinomas patients, especially in those with distant metastasis.

Improved visible-blindness of AlGaN deep ultraviolet photodiode with monolithically integrated angle-insensitive Fabry-Perot filter.

Despite the rapidly increasing demand for accurate ultraviolet (UV) detection in various applications, conventional Si-based UV sensors are less accurate due to disruption by visible light. Recently, Ga(Al)N-based photodiodes have attracted great interest as viable platforms that can avoid such issues because their wide bandgap enables efficient detection of UV light and they are theoretically blind to visible and infrared light. However, the heteroepitaxy of a Ga(Al)N layer on sapphire substrates inevitably leads to defects, and the Ga(Al)N photodiode (PD) becomes not perfectly insensible to visible light. Employment of a dielectric stacked UV pass filter is possible to avoid unwanted absorption of visible light, but the angle-dependent pass band limits the detection angle. Here, we have demonstrated the Ag-Al2O3 Fabry-Perot UV pass filter-integrated AlGaN ultraviolet photodiode. The inherent optical extinction characteristics of Ag was utilized to design the fabrication-tolerant UV pass filter with a peak transmittance at ∼325 nm. As the angle of incidence increased, the peak transmission decreased from 45% to 10%, but the relative transmission spectrum remained almost unchanged. By integrating these filters, the visible light rejection ratio (responsivity for 315 nm light to responsivity for 405 nm light) was improved by a factor of 10, reaching a value of 106 at angles of up to 80 degrees.

Thermionic transport across gold-graphene-WSe2 van der Waals heterostructures.

Solid-state thermionic devices based on van der Waals structures were proposed for nanoscale thermal to electrical energy conversion and integrated electronic cooling applications. We study thermionic cooling across gold-graphene-WSe2-graphene-gold structures computationally and experimentally. Graphene and WSe2 layers were stacked, followed by deposition of gold contacts. The I-V curve of the structure suggests near-ohmic contact. A hybrid technique that combines thermoreflectance and cooling curve measurements is used to extract the device ZT. The measured Seebeck coefficient, thermal and electrical conductance, and ZT values at room temperatures are in agreement with the theoretical predictions using first-principles calculations combined with real-space Green's function formalism. This work lays the foundation for development of efficient thermionic devices.